 Open Access
 Total Downloads : 160
 Authors : M. Manasa, P.Prasad Rao
 Paper ID : IJERTV5IS100372
 Volume & Issue : Volume 05, Issue 10 (October 2016)
 DOI : http://dx.doi.org/10.17577/IJERTV5IS100372
 Published (First Online): 26102016
 ISSN (Online) : 22780181
 Publisher Name : IJERT
 License: This work is licensed under a Creative Commons Attribution 4.0 International License
A 10W Hybrid OTA with BulkBiasing Driving 20nF Capacitive Load with 115 dB DCgain and 1.68MHz GBW
M.Manasa P.Prasad Rao

ech Scholar,
Department of ECE
HOD, Department of ECE
Vaagdevi Engineering College (JNTUH) Vaagdevi Engineering College (JNTUH) Warangal,Bollikunta506005 Warangal,Bollikunta506005
AbstractFor better area and power efficient, single stage amplifiers are a better replacement of their multistage cmplifies ounterparts, particularly for display applications that imply massive buffer amplifier in their column drivers. This paper employs a signalcurrent enhancer technique for a single stage amplifier to achieve significant enhancement of DC gain, gainbandwidth product (GBW) and slewrate. Ana bulk biasing technique employed to minimize the internal node capacitances and area of OTA. Analytical treatments of the signalcurrent enhancer technique in terms of performance limits and robustness reveals that hybrid OTA can suppress the fundamental powerefficiency limit set by the basic differential pair amplifier. The proposed hybrid OTA is implemented in a standard PTM 65 nm CMOS technology. Working under a 0.5V supply and proven by simulation results, the resultant OTA when driving an output capacitor of 20nF attained 115 dB DC gain, a GBW of 1.68 MHz and an Slewrate of 0.15 V/Âµs, consuming only 10Âµw of current and requiring no compensation capacitor.
KeywordsAmplifier, frequency response, large capacitive loads, transient response, signal current enhancement .

INTRODUCTION
For many modern applications require highgain and fast settling operational transconductance amplifiers (OTAs) driving offchip loads in the order of hundreds (or even thousands) pico farads, such as high accuracy modulators, analogtodigital converters, lowdropout regulators, headphone drivers and display applications like wide dimension lowtemperature polysilicon (LTPS) LCD panels
[1] that involve thousands of buffer amplifiers in their column drivers, the area and power budgets of each buffer amplifier are extremely tight to meet the market pressure on cost and display quality [1]. The buffer amplifiers should drive a wide range of capacitive load (CL) up to tens of nanofarad (nF), while securing adequately large DC and output swing. Batteryoperated portable systems integrate most of these blocks and, in addition, they work under tight power and area budgets.In this context the design of highgain OTAs driving heavy capacitive loads is a challenging task, especially when nanometers technologies are adopted, as they suffer from a drastic reduction of the intrinsic gain that can be only partially mitigated by the adoption of nonminimum channel length transistors. In principle, stackeddevice (i.e., cascode) topologies provide high DC gains but they reduce the output
swing and have been progressively abandoned for this reason. Presently, the only viable solution to get DC gains in excess of 80 dB in scaled technologies is the adoption of multistage architectures, where simple gain stages are exploited. Since they provide very high DC gains without sacrificing output swings. Of course, the simplest gain stage available is a common source amplifier entailing only two complementary MOS transistors between the supply rails, though this choice limits the number of topologies available to the designer. However, the need for frequency compensation increases their design complexity, which also restricts their drivability of (range and size), area and power efficiencies.
The design of multistage amplifiers is also complicated by the increased number of high impedance nodes (and, in turn, of low frequency poles and zeros in the loopgain transfer function) which compromise stability, especially when the capacitive load is heavy. An OTA consuming power in ÂµW range generates tiny signal currents by input differential pair. By effectively enhancing these signal currents, both the GBW and gain can be significantly improved. This paper presents a signalcurrent enhancer to enhance the magnitude of the signal currents generated by the input differential pair. The signal current enhancer is able to augment both the voltage gain and GBW even when non cascode structure is engaged.

OPERATIONAL TRANSCONDUCTNACE AMPLFIER WITH SIGNALCURRENT ENAHCNER.
In this section, the basic operation of the signalcurrent enhancer circuit with bulk biasing is described for OTA design.
A. Concept of SignalCurrent Enhancer
The signal current enhancer circuit as shown in Fig. 1. In circuit IB indicates the DC bias current and is shows small signal current generated from input differential amplifier. This cell consumes a current of 2(k+1)IB. The OTA was designed for driving a large capacitive load by cascading of signal current enhancers. The bulk terminal PMOS transistor can access directly without effecting other device performance. The minimum supply voltage require for each enhance circuit is VGS+VDS(sat) . With bulk biasing of PMOS gateto source voltage can be reduced for the same value of current. Which is useful to design amplifier with lowsupply voltage (< 1 V).
enhanced by the signalcurrent enhancer by (2k+1)6 times. The signal current is additionally scaled up by the transistor size ratio (i.e m) of the current mirrors to generate an output signal current io of m(2k+1)6gm1vin. The enhanced io will be used to charge/discharge CL according to the change of vin so that the GBW is also widened by m(2k+1)6 times to yield
GBW m 2k 16 gm1
(4)
C
C
L
m1
m1
The voltage gain likewise boosted by m(2k+1)6 time to give
vout vin
m 2k 16 g
rNo2
/ /rPo2
(5)
Fig. 1 Signalcurrent enhancer with bulk biasing indicated with dc and small signal currents
Where rNo2 and rPo2 are the rain resistance of MNo2 and MPo2, respectively. The total current IDD of the proposed OTA is hence
Here, six signalcurrent enhanced cascaded to achieve high gain and to drive capacitive loads. The arrangement of cells are shown Fig. 2. The dc and signal current at the output of Cell 2 are IB and Â±(2k+1)2is , respectively. Similarly, the dc and signal currents at the output of Cell 6 become IB and
IDD 6 2k 1 m 4IB
C. LargelSignal Analysis of OTA with SignalCurrent Enhancers
(6)
Â±(2k+1)6is respectively. The dc ration, signal gain, and supply current (IDD) of the six cascade structures are, therefore, given by
I I
The large signal operation of the signalcurrent enhance is shown in Fig. 4. Two different cases are considered: having 2IB at one input and 0 current at other, and vice versa. It is noted that the output current of the enhancer are 0 and 2(k+1)IB, respectively.
dc ratio= BOUT B 1
(1)
The largesignal responses [i.e., the positive slewing (SR+ )
IBIN IB
2k 16 i
and negative slewing (SR )] of the proposed OTA are shown in Fig. 5. When a rising step input is applied to Vip + , the tail current goes entirely to M1 and so the input currents to Cell 1 are exactly the case shown in Fig. 4(a). The input currents 2IB
signal gain
s 2k 16
is
(2)
and 0 are processed by Cell 1 to be the output currents 0 and
2(k+1)IB. Based on the concepts presented in Fig. 4(a) and (b), after going through all the six cells, the output currents of the
IDD
6 2k 1 I
B
(3)
six cascade signalcurrent enhancers are 2(k+1)6IB and 0, respectively. Since te input current of MN01 is 0, only MP01 and MPo2are turned ON, and the current of 2(k+1)6IB from Cell
The proposed design uses less supply current, voltage and
because of bulk bias less parasitic poles generated by signal nodes. Since for the bias current IB PMOS require small geometrics. In principle, the maximum achievable bandwidth of the proposed amplifier is higher due to less parasitic effects.
B. SmallSignal Analysis of OTA with SignalCurrent Enhancers
In Fig. 3, the cascade signalcurrent enhancer is applied to a classical OTA by inserting it between the input differential
6 is further scaled up by the mratio of MPo1 and MPo2. The
output transient current is thus 2m(k+1)6IB, and the SR+ is also heightened by m(k+1)6 times as shown in Fig. 5(a), when comparing with a standard OTA. Similarly, as shown in Fig. 5(b), when a rising step input is applied to Vin the SR can also enjoy the same boosting factor. As such, the proposed circuit can enhance the transient current on its own, without SR enhancement circuit, to achieve
2I
pair and the output stage. When an input differential signal vin
SR m k 16 B
(7)
is applied to the input stage is=0.5gm1vin where gm1 is the transconductance of M1 is generated, and is is further
CL
Fig. 2 Signal current enhancer (six cascade cells) indicated both dc and signal currents
Fig. 3 Hybrid OTA with bulk biasing currentenhancer
Fig. 4 Largesignal responses of signalcurrent enhancer (a) Case 1: input currents are 2IB and 0. (b) Case 2: input current are 0 and 2IB
The node resistances, node capacitances, and estimated locations of parasitic poles at node n0n14 can be tabulated, as shown in Table I. In order to locate tall parasitic poles beyond
the GBW to achieve sufficient phase margin (PM), the values of k and m cannot be too large. Therefore, k=2 is selected to provide an improvement factor of (2k+1)6 =15,625 for GBW and voltage gain, and to achieve an enhancement factor of (k+1)6=729 for the slewrate. These improvements are sufficient to have the OTA outperform the stateofart designs.
Table 1 Parasitic Poles in Hybrid OTA
Nodes
Node resistance
Node capacitance
Parasitic Poles
n1,n3,n5,n7,n9,and n11
1/gmp
(2k+2).Cgp
gmp/(2k+2).Cgp
n13
1/gmp
(m+1). Cgp
gmp/(m+1).Cgp
n0
1/gmp
2Cgp
gmp/2Cgp
n2,n4,n6,n8,and n12
1/gmn
(2k+2).Cgn
gmp/(2k+2).Cgn
n14
1/gmn
(m+1).Cgn
gmp/(m+1).Cgn
Fig. 5 Largesignal responses of hybrid OTA (a) rising step input at Vip and (b) rising step input at Vin
A summary on the performance of OTA with signal current enhancer is tabulated in Table 2. The supply current increases linearly with k and a factor of 6 due to the six cascade cells used. Providentially, the GBW, voltage gain, and SR are all exponentially increased by a power of 6, which augment all significantly at only a slight increase in power.
Table 2 Summary of Performances of Hybrid OTA
Supply current
IDD={6[2(K+1)]+m+4}IB
GBW product
GBW=m(2K+1)6 (gm1/Co)
Voltage gain
VO/Vin=m(2k=1)6 gm1(rono2//roPO2)
Slew rate
SR=m(k+1)6 (2IB/CO)

SIMULATION RESULTS
Amplifier in Fig. 3 implemented in 65 nm PTM CMOS technology. This CMOS technology has a nominal supply voltage of 0.5 V. The gatetosource voltage of the NMOS and PMOS transistor are 0.25 and 0.25 V. The threshold voltage of PMOS transistor with a bulk bias voltage of 0.25 V is 0.32 V. The unit size of NMOS transistor is 2.5 Âµm/0.5 Âµm and that of PMOS transistor is 4 Âµm/0 .2 Âµm. The selected values of k and m are 2 and 3. The proposed OTA does not require compensation capacitor. The simulation results with 0.5V supply voltage and 20nF load capacitance CL are presented here.
Fig. 6 shows the simulation frequency responses of bulk
slewrates are 0.15 V/Âµs for CL=20 nF, 0.075 V/Âµs for CL=40 nF, and 0.06 V/Âµs for CL=50 nF, respectively. The ovel all performance of realized amplifier is summarized in Table 3. The performance of the amplifier is compared with relevant design in Table 3.
Fig. 6 Simulated openloop frequency responses of bulkbiased Hybrid OTA
Generally, the efficiency of a frequency compensation scheme is characterized by four commonly used figures of merit (FOM).
biased hybrid OTA. B The obtained GBWs and PMs are 1.68 MHz and 530 for CL=20 nF, 0.877 MHz and 710 for CL=40 nF, and 0.7 MHz and 740 for CL=50 nF, respectively. Fig. 7 illustrate the frequency response of the OTA in unitygain configuration. The lowimpedance nodes (i.e., n0n14) in the proposed signalcurrent enhancer have minute effects on the stability of the proposed OTA since the parasitic poles are located at much higher frequencies than the GBW. Fig. 8 depicts the transient responses of the proposed OTA in unity gain configuration with a step input of 0.5 V. The average
FOMs
FOML
GBW.CL
Power
SR.CL ,
Power
, IFOMs
IFOML
GBW .CL
IDD
SR.CL
IDD
Table 3 Performance Summary and Comparison
Parameters
IAC [2]
CFCC[3]
CBMC[4]
CLIA[5]
NCM[6]
Hybrid OTA[1]
This work
Technology(Âµm)
0.35
0.065
0.35
0.13
0.18
0.13
0.065
CL (pF)
150
500
15 000
680
500
10 000
20 000
VDD (V)
1.5
1.2
2
1.2
1.2
0.7
0.5
IDD (ÂµA)
20
17
72
10.5
3
24
10Âµw
Dc gain (dB)
110
>100
>100
>100
84
~100
115
GBW(MHz)
4.4
2
0.95
3.37
0.396
1.99
1.68
SR (V/Âµs)
1.8
0.65
0.22
0.67
0.0115
0.7
0.15
PM (o)
57
52
52.3
45
81.4
47
53
Onchip capacitance(pF)
1.6
1.15
2.6
0.587
0
0
0
FOMS (MHz.pF/mW)
22 000
49 020
98 958
181 873
55 000
1 184 524
3 360 000
FOML (V/Âµs.pF/mW)
9000
15 931
22 917
36 159
1597
416 667
300 000
IFOMS (MHz.pF/mA)
33 000
58 823
197 916
218 247
66 000
829 166
1 680 000
IFOML (V/Âµs.pF/mA)
p>13 500 19 118
45 834
43 391
1916
291 667
150 000
Fig. 7 Simulated frequency responses of bulkbiased Hybrid OTA in unity gain configuration.
FOMs are actually inadequate to qualitatively evaluate a frequency compensation scheme, because the stability is also a critical criterion to impact the quality of a frequency compensation performance and should be taken into account for frequency compensation design.

CONCLUSION

The operational transconductance amplifier is designed to drive a large capacitive loads. To operate the OTA under lowsupply voltage bulkbiasing technique employed. A signalcurrent enhancers is employed in this paper. The cascade structure of six signal current enhancers is applied to a standard OTA to improve its GBW, SR, and voltage gain through the enhancements of the smallsignal and transient output currents from the enhancers, The GBW and SR are improved by a factor of a m(2K+1)6 and m(K+1)6 , respectively, the simulation results have fully verified performances scheme.
Fig. 8 Step responses of Hybrid OTA
FOMS and FOML evaluate the compensation performance on a system level design point of view, while IFOMS and IFOML address an inspection on the transistor level, since both GBW and SR depend only on the bias current of a transistor. FOMS and IFOMS are the indications of the smallsignal behavior of the amplifier, and FOML and IFOML illustrate the large signal behavior of the amplifier. Nonetheless, these four
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