Author(s): Priyadarshini Jena, Rajesh Ku Mishra, K.Hari krishna
Published in: International Journal of Engineering Research & Technology
License: This work is licensed under a Creative Commons Attribution 4.0 International License.
Volume/Issue: Vol.1 - Issue 10 (December - 2012)
In this project we present the modelling of SOI- MOSFET through simulation TCAD tool in micrometer dimensions called SILVACO-ATLAS. This simulation tool is used for modelling of different types of semiconductor devices. SILVACO is a 2D virtual wafer fabrication tool where many simulators are present within it. The main simulators are Atlas and Athena etc. SOI Technology follows after CMOS devices. The major problems associated with CMOS devices are Degraded subthreshold slope, Parasitic capacitance and Latch up effect .SOI-MOSFET is a Silicon on Insulator (SOI) metal oxide semiconductor FET structure where a semiconductor layer e.g. silicon, germanium or the like is formed above an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. The characteristics of SOI-MOSFET can be studied by varying thickness of either silicon layer or oxide layer and the effect of change in threshold voltage values. Different characteristics curves between voltage and current, capacitance and voltage and thickness in silicon layer and threshold voltage etc. Different structures were modelled in SILVACO-Atlas. All these curves are obtained from these different structures of SOI-MOSFET devices. The advantages of using SOI-MOSFET device to remove high parasitic capacitance values and latch effect thereby improving performance. This SILVACO software will provide all types of device modelling with low-cost and easily available simulators successfully.
Number of Citations for this article: Data not Available
7 Paper(s) Found related to your topic: