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The (Zn2+, Ga3+)-Partition Investigation of the Homologous Series Ga2O3(ZnO)m (m=9 and 10) Applying the Bond Valence Model


The (Zn<sup>2+</sup>, Ga<sup>3+</sup>)-Partition Investigation of the Homologous Series Ga<sub><strong>2</strong></sub>O<sub><strong>3</strong></sub>(ZnO)<sub><strong>m</strong></sub> (m=9 and 10) Applying the Bond Valence Model
Authors : Emile Duclo Tchouankwe Kamga, Armin Kirfel, Astrid Holzheid, Werner Mader
Publication Date: 20-09-2017

Authors

Author(s):  Emile Duclo Tchouankwe Kamga, Armin Kirfel, Astrid Holzheid, Werner Mader

Published in:   International Journal of Engineering Research & Technology

License:  This work is licensed under a Creative Commons Attribution 4.0 International License.

Website: www.ijert.org

Volume/Issue:   Volume. 6 - Issue. 09 , September - 2017

e-ISSN:   2278-0181

Abstract

The (Zn2+, Ga3+)-partitions of the homologous series Ga2O3(ZnO)m (m=9 and 10) are investigated with the high energy synchrotron single crystal X-ray diffraction data, collected with the wavelength, λ =0.47Å, in sufficient distance of the Zinc and Gallium-K-absorption edge, where the resonant scattering effect is greatly small. The synthesized single crystals of Ga2O3(ZnO)9 and Ga2O3(ZnO)10 crystallize in the space group Cmcm with cells parameters a=3.252(5), b=19.695(5), c=33.589(4) and a=3.252(5), b=19.958(5), c=36,541(2)Å, and α=β=γ= 90˚ respectively. The structures consist of parts of known oxide structures with the apparition of split-position on the mirror plan. Zn2+- and Ga3+-partitions are determined applying the bond valence theory. The result reveals over the unit cell modulated variations of Zinc and Gallium concentration.

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